1/9 january 2005 table 1: general features n low equivalent on resistance n very fast-switch, up to 150 khz n squared rbsoa, up to 1500 v n very low c iss driven by rg = 47 w application n single switch smps based on three phase mains description the STC08DE150 is manufactured in a hybrid structure, using dedica ted high voltage bipolar and low voltage mosfet technologies, aimed at providing the best performance in esbt topology. the STC08DE150 is designed for use in aux flyback smps for any three phase application. figure 1: package figure 2: internal schematic diagram table 2: order code v cs(on) i c r cs(on) 0.6 v 8 a 0.075 w to247-4l electrical symbol device structure part number marking package packaging STC08DE150 c08de150 to247-4l tube STC08DE150 hybrid emitter switched bipolar transistor esbt? 1500 v - 8 a - 0.075 w preliminary data rev. 1
STC08DE150 2/9 table 3: absolute maximum ratings table 4: thermal data table 5: electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter value unit v cs(ss) collector-source voltage (v bs = v gs = 0 v) 1500 v v bs(os) base-source voltage (i c = 0, v gs = 0 v) 30 v v sb(os) source-base voltage (i c = 0, v gs = 0 v) 9v v gs gate-source voltage 20 v i c collector current 8a i cm collector peak current (t p < 5ms) 15 a i b base current 4a i bm base peak current (t p < 1ms) 8a p tot total dissipation at t c = 25 o c 155 w t stg storage temperature -65 to 125 c t j max. operating junction temperature 125 c symbol parameter unit r thj-case thermal resistance junction-case max 0.64 o c/w symbol parameter test conditions min. typ. max. unit i cs(ss) collector-source current (v bs = v gs = 0 v) v cs(ss) = 1500 v 100 m a i bs(os) base-source current (i c = 0 , v gs = 0 v) v bs(os) = 30 v 10 m a i sb(os) source-base current (i c = 0 , v gs = 0 v) v sb(os) = 9 v 100 m a i gs(os) gate-source leakage (v bs = 0 v) v gs = 20 v 500 na v cs(on) collector-source on voltage v gs = 10 v i c = 8 a i b = 1.6 a v gs = 10 v i c = 5 a i b = 0.5 a 0.6 0.6 1.4 v v h fe dc current gain i c = 8 a v cs = 1 v v gs = 10 v i c = 5 a v cs = 1 v v gs = 10 v 4.5 8 7.5 10 v bs(on) base-source on voltage v gs = 10 v i c = 8 a i b = 1.6 a v gs = 10 v i c = 5 a i b = 0.5 a 1.5 1 2v v v gs(th) gate threshold voltage v bs = v gs i b = 250 m a1.52.23v c iss input capacitance v cs = 25 v f = 1 mhz v gs = v cb =0 750 pf q gs(tot) gate-source charge i c = 8 a v gs = 10 v v cs = 25 v v cb = 0 12.5 nc t s t f inductive load storage time fall time v gs = 10 v r g = 47 w v clamp = 1200 v t p = 4 m s i c = 5 a i b = 0.5 a 526 8.5 ns ns v csw maximum collector-source voltage switched without snubber r g = 47 w h fe = 5 a i c = 8 a 15 v
STC08DE150 3/9 v cs(dyn) collector-source dynamic voltage (500 ns) v cc = v clamp = 300 v v gs = 10 v r g = 47 w i c = 4 a i b = 0.8 a t peak = 500 ns i bpeak = 8 a (2 i c ) 6v v cs(dyn) collector-source dynamic voltage (1 m s) v cc = v clamp = 300 v v gs = 10 v r g = 47 w i c = 4 a i b = 0.8 a t peak = 500 ns i bpeak = 8 a (2 i c ) 2.2 v symbol parameter test conditions min. typ. max. unit
STC08DE150 4/9 figure 3: output characteristics figure 4: reverse biased safe operating area figure 5: dc current gain figure 6: dynamic collector-emitter satura- tion voltage figure 7: gate threshold voltage vs tempera- ture
STC08DE150 5/9 figure 8: collector-source on voltage figure 9: base-source on voltage figure 10: inductive load switching time figure 11: collector-source on voltage figure 12: base-source on voltage figure 13: inductive load switching time
STC08DE150 6/9 figure 14: enlargement fbsoa circuit table 6: components, values v b1 = 4.16 v d 1 = ba157 r 1 = 1 w r 2 = 100 w r 3 = 180 w r g = 47 w c 1 = 4700 f c 2 1000 pf v cc = 1500 v v g = 10 v pulse time = 5 s
STC08DE150 7/9 dim. mm min. typ. max. a 4.85 5.15 a1 2.20 2.60 b 0.95 1.10 1.30 b1 1.30 1.70 b2 2.50 2.90 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e2.54 e1 5.08 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ?p 3.55 3.65 ?r 4.50 5.50 s5.50 7536918a to247-4l mechanical data
STC08DE150 8/9 table 7: revision history date release change designator 20-jan-2005 1 first release.
STC08DE150 9/9 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2005 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com
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